A recent article by Junko Yoshida for the Yole Group describes how Nvidia, a company that doesn’t design or make power ...

Shari Liss, Vice President, Global Workforce Development and Initiatives, SEMI and SEMI Foundation, discusses the National ...

New advanced trench MOSFETs are increasingly requested with improved linear mode ruggedness to provide excellent performance in telecom, server and industrial applications. They play a key role in ...

Diodes Inc has introduces the AP74502Q and AP74502HQ automotive-compliant 80V ideal diode controllers, providing protection against reverse connections and voltage transients. Typical applications ...

A majority of IoT devices are powered by primary battery cells, also known as non-rechargeable batteries, but limited battery life and the need to replace discharged batteries create numerous problems ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging called X.PAK. This package, with its compact form factor of 14 mm x 18.5 mm, is ...

Soitec’s Power-SOI 300mm substrates for advanced gate driver ICs to drive power conversion wide-bandgap devices at high switching frequency. This feature examines Power-SOI technology and its ...

Navitas Semiconductor has announced that Xiaomi’s next-generation 90W GaN charger will be powered by GaNSense Control ICs. Described as the world’s smallest 90 W charger, the device measures 34 × 45 × ...

Toshiba Electronics Europe has launched two single-channel H-bridge drivers for brushed DC motors, the TB67H453FNG and TB67H453FTG. They feature maximum motor output ratings of 50V and 3.5A, ensuring ...

Low on-resistance and reduced conduction losses boost efficiency in switched-mode power supplies Toshiba Electronics Europe has launched an N-channel power MOSFET to address the growing demand for ...

Rice University team says new technique could enable faster, more efficient electronics Engineers and researchers who work with diamond for quantum sensors, power electronics or thermal management ...

Researchers from University of Science and Technology of China (USTC) have achieved dynamic junction temperature (Tj ) mapping of a vertical GaN PiN diode during extreme stress transients up to 10000 ...