The DCM32xx00 series of 2-channel digital isolators is available in the narrow 8-pin SOIC8-N package and offers stable ...

APEC 2026's Organising Committee has sent out a call to qualified experts to present a Professional Education Seminar during ...

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Alpha and Omega Semiconductor (AOS) has introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology.

Rohm, a maker of SiC, GaN and silicon power devices, has added its name to companies supporting NVIDIA’s new 800V High ...

Swansea University and Space Forge, pioneer in space-based materials manufacturing, have signed a major deal, making the ...

The demonstration design uses the ams OSRAM AS6212 temperature sensor and STMicroelectronics LIS2DW12 accelerometer boards ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Using gallium nitride (GaN) field-effect transistors (FETs) in a power supply can help boost efficiency and enable operation at higher switching frequencies, helping designers meet the strict power ...